International Journal of Innovative Research in Science, Engineering and Technology

International Journal of Innovative Research in Science, Engineering and Technology

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ISSN ONLINE(2319-8753)PRINT(2347-6710)

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Special Issue Article Open Access

A Novel SB-MOSFET with Record Switching Characteristic

Abstract

This paper presents a novel 65 nm nchannel SB-MOSFET(Schottky barrier MOSFET) based Tunnel Field Effect transistor using Non-Local Band-to- Band tunneling model that shows the good switching characteristic.Stacks of Erbium silicide and Cobalt silicide is used as source/drain because of low schottky barrier height of Erbium silicide and high schottky barrier height of Cobalt silicide. TCAD Simulation is made which shows the result with the record high Ion/Ioff ratio of 4.08×109and the steepest pointsub threshold swing of 77.12mV/decade.

Om Prakash Mahto,S. Baishya,Koushik Guha ,Ajay Parmar

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