Research Article Open Access

Crystallization and Sample Temperature Calculation of Si Film on Glass Substrate during Soft X-ray Irradiation

Abstract

Sample temperature during low-temperature crystallization using soft X-ray source was investigated. The temperature of silicon film on glass substrate was measured by a thermocouple or pyrometer and was calculated using computational fluid dynamics. When the heat transfer coefficient without thermal contact resistance between sample and sample holder was used for the calculation, the calculated temperature was lower than the measured temperature. It is considered that thermal contact resistance is important for thermal calculation during the soft X-ray irradiation. However, the calculated temperature distribution (the area of high-temperature region) in plain agreed with the crystallized area. It is expected that the sample temperature during the soft X-ray irradiation can be calculated by using effective heat transfer coefficient included thermal contact resistance. The computational fluid dynamics is useful for application of soft X-ray irradiation technique to industry.

Akira Heya and Naoto Matsuo

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