High performance complex oxide hetero-structures for nanoelectronic devices

13^th International Conference on Advanced Materials and Nanotechnology

OCTOBER 26-28, 2017 OSAKA, JAPAN

Sean Li

University of New South Wales, Australia

ScientificTracks Abstracts: Res. Rev. J Mat. Sci

DOI: 10.4172/2321-6212-C1-008

Abstract

The demand for higher performance and lower power consumption in electronic systems is the main driving force for the creation of new materials for devices in nanometer scale. The success of these new materials is dependent on significant enhancement in carrier mobility and conductivity. In this work, we spatially separate the electron generation layer from the conduction layer by engineering the atomically sharp complex oxide hetero-interfaces to enhance the electron mobility and density individually. It aims to develop a novel material with ultrahigh electron mobility and conductivity that are orders of magnitude above today�¢����s state- of-the-art materials at room temperature to enable next generation nanoelectronics.

Biography

Sean Li is presently associated with School of Materials Science and Engineering the University of New South Wales, Sydney. He has published numerous research papers and articles in reputed journals and has various other achievements in the related studies He has extended his valuable service towards the scientific community with hisextensive research work.
 

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