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Volume 6
Research & Reviews: Journal of Material Sciences
ISSN: 2321-6212
Advanced Materials 2018
September 04-06, 2018
September 04-06, 2018 | Zürich, Switzerland
21
st
International Conference on
Advanced Materials & Nanotechnology
Journey from the forest of nanowires to the flatland of 2D materials
Albert Davydov
National Institute of Standards and Technology, USA
S
ilicon whiskers were discovered in late 1950’s and rediscovered in mid-90’s. A single layer of graphite was discovered in 2004
(crowned with the 2010 Nobel prize) and followed by explosion of research on other 2D layered materials including MoS
2
and related transition metal dichalcogenides. Both breakthroughs led to exploration of fascinating properties of nanowires and
atomically-thin layers, including quantum confinement, reduced density of structural defects, large active surface area and
functional flexibility for electronics, photonics, sensors and energy applications. This seminar discusses our group research
on fabrication, characterization and processing of semiconductor nanowires (NWs) into small-footprint chemical sensors,
photodetectors and Li-ion batteries. The design of NWplatforms spans frompick-n-place silicon and galliumnitride individual
nanowire devices to vertically- and/or horizontally aligned periodic arrays towards wafer-scale device fabrication. From the
forest of nanowires, the talk will proceed to the flatland of MoTe
2
, MoSe
2
and other metal chalcogenide thin films, with the aim
to benchmark their structural, optical and electrical properties and explore their potential application in beyond CMOS low-
power, high-speed and flexible electronics and chem/bio-sensors.
albert.davydov@nist.govRes. Rev. J Mat. Sci. 2018, Volume 6
DOI: 10.4172/2321-6212-C3-021