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RRJOMS | Volume 5 | Issue 7 | November, 2017
November 13-15, 2017 | Las Vegas, USA
14th International Conference and Exhibition on
Materials Science and Engineering
Surface stress in nano-structural formation
It is clear that surface stress and surface morphology have a strong relationship. The surface stress results from the microscopic
bonding configuration at the surface. The Si reconstructed surface has unique structure based on dangling bonds reduction
and adatom formation. Although the rearrangement of the surface atoms largely reduces the electronic energy of surface by
reducing the number of surface dangling bonds, the surface reconstruction increases the surface stress and the surface energy
as well. Complex arrangements of the surface atoms, such as adatoms, dimers, and stacking faults are formed on Si(111)
7×7, and pair of pentagons are formed on Si(110) 16×2. Despite the importance of the surface energy of Si, the experimental
knowledge on the impacts of reconstruction on the Si surface has been quite limited. We have focused on stress measurements
during desorption and adsorption process of hydrogen on the Si(111) 7×7 and Si(110) 16×2 surfaces. In order to obtain
information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and
the reflection high-energy electron-diffraction instrumentations in an identical ultrahigh vacuum system.
Biography
Currently Hidehito Asaoka focuses on impacts of surface stress on reconstruction and nano-structural formation using molecular beam epitaxy (MBE), X-ray pho-
toelectron sectroscopy (XPS), scanning tunneling microscopy (STM).
Hidehito Asaoka
Japan Atomic Energy Agency, Japan
Hidehito Asaoka, Res. Rev. J Mat. Sci. 2017, 5:7
DOI: 10.4172/2321-6212-C1-010