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.com
Volume 6
Research & Reviews: Journal of Material Sciences
ISSN: 2321-6212
Materials Physics 2018
August 16-17, 2018
August 16-17, 2018 | London, UK
4
th
International Conference on
Condensed Matter and Materials Physics
Electrical characterization of He-ion irradiated Pd/n-SiGe Schottky diode
Mohammed Mamor
1
and
Khalid Bouziane
2
1
Cadi Ayyad University, Morocco
2
International University of Rabat, Morocco
T
here has been considerable interest in integrating high speed and novel devices made from Si
1-x
Ge
x
materials, since
the alloy is compatible with the silicon based technology. Ion implantation is now a common process in the mature
semiconductor industry and is widely used during several electronic devices fabrication steps. In particular, ion implantation
is used to improve the fast switches and the performance of photodiodes. Moreover, it is well known that ion implantation into
semiconductor materials has a profound influence on the structural and electronics properties of their surface and subsurface
region. The ion implantation induces structural and electronic changes, which governs the characteristics of metal contacts
formed on the semiconductor. In this presentation, we report on the electronic properties of He-ion irradiation induced defects,
as determined by deep level transient spectroscopy (DLTS). In addition, we present the results obtained on temperature-
dependent of the Schottky barrier height (SBHs) fabricated on He-ion irradiated n-Si
0.90
Ge
0.1
and the impact of this irradiation
on the conduction mechanism in Pd/n-Si
0.90
Ge
0.10
Schottky barrier diodes (SBDs). The electrical properties of He-ion irradiated
Pd/n-Si
0.9
Ge
0.1
Schottky diodes were studied in a wide temperature range (100-300 K). It was found that the current flow is
controlled mainly by thermionic emission. The Schottky barrier height (
Φ
bn
) and ideality factor (
n
) of Pd/n-Si
0.9
Ge
0.1
Schottky
diode have been studied as a function of temperature. A decrease of
Φ
bn
and an increase of
n
with decreasing temperature
are observed. Additionally, linear dependence between the so-called temperature factor T
0
and temperature as well the well-
known linear correlation between SBHs and ideality factors,
Φ
bn
(n), are observed and explained in terms of inhomogeneities
due to the presence of He-ion irradiation induced defects and traps with associated energy level localized in the gap.
mohammedmamor@yahoo.comRes. Rev. J Mat. Sci. 2018, Volume 6
DOI: 10.4172/2321-6212-C2-018