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Volume 5, Issue 5

Res. Rev. J Mat. Sci. 2017

ISSN: 2321-6212

Advanced Materials 2017

September 07-08, 2017

September 07-08, 2017 | Edinburgh, Scotland

Advanced materials & Processing

International Conference on

Epitaxial growth of 2D heterostructures toward pristine TMDs

Eui-Hyeok (EH) Yang

Stevens Institute of Technology, USA

his abstract summarizes some of our research activities concerning the growth and nanofabrication of 2D materials. TMDs are

prone to rapid oxidation in air, presenting a critical roadblock in practical device applications. Here, we attempt to address the

issue of oxidation of TMDs and find conditions for growing oxidation-free TMDs, which will mark a milestone for the coordinated

improvement in their applications. To this end, we study chemical vapor deposition (CVD)-growth and extensive material

characterization to provide deeper understanding of the role of other 2D substrates in the prevention of interior defects in TMDs

and, thus, uncover the conditions for anti-oxidation. For the growth, we explore a direct/epitaxial growth process of 2D crystals. Our

growth method permits the growth of transition metal dichalcogenides (TMDs) on the ‘contacted’ areas only, enabling fabrication of

in-phase 2D heterostructures. This method facilitates localized, patterned, single crystalline or large-scale polycrystalline monolayers

of MoS2, WS2, WSe2 and MoSe2. With this technique, we furthermore show the epitaxial growth of TMDs on hBN and graphene

and vertical/lateral heterostructures of TMDs, uniquely forming in-phase 2D heterostructures. We examine the resulting quality and

integrity of several heterostructure combinations using Raman, low temperature PL, XPS and SAED characterization, before and after

oxidation. This research provides a detailed look into the oxidation and anti-oxidation behaviors of TMDs, which corroborates the

role of underlying 2D layers in the prevention of interior defects in TMDs. If the technique could be developed to be highly reliable

and high fidelity it could have a large impact on the future research and commercializability of TMD-based devices.

Res. Rev. J Mat. Sci. 2017, 5:5

DOI: 10.4172/2321-6212-C1-006