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Volume 6 Research & Reviews: Journal of Material Sciences Advanced Materials 2018
September 19-21, 2018
September 19-21, 2018 Tokyo, Japan
22nd International Conference on
Advanced Materials and Nanotechnology
Doo-Hyeb Youn et al., Res. Rev. J Mat. Sci. 2018, Volume 6
DOI: 10.4172/2321-6212-C4-024
Transition metal dichalcogenide based electrospun fibers formation as a potential for gas sensor
Doo-Hyeb Youn1, Bong-Jun Kim2, Hongkyw Choi 1, Changbong Yeon1,3 and Sun Jin Yun1,3
1Electronics and Telecommunications Research Institute, Republic of Korea
2Mobrik Co. Ltd., Republic of Korea
3University of Science and Technology, Republic of Korea
With the rapid development of industry, the hazardous gases have become a serious problem which is harmful to human
health and safety. NO2, as one kind of toxic gases, can cause photo chemical smog and acid rain. In addition, it could
affect human health even at Part Per Million (ppm) levels, such as respiratory system and nerve system. Thus, there is a
strong demand for developing cheap, reliable and sensitive gas sensors targeting NO2. Recently, gas sensors with hybrid of
one dimensional fibers and nanostructure such as a wire, tube, and fiber have attracted much attention owing to their high
sensitivity, low cost and high response. In these studies, we fabricate the electro spun MoS2 and WS2 fibers with hierarchical
flower-like structures. We applied WS2 fibers in gas sensors using their high surface-to-volume ratio and unusual electrical
properties. There is no report on the fabrication of sensors of MoS2 and WS 2 fibers consisting of WS2 fiber and high crystalline
nanostructures (sheets) attract more interest due to their less gas diffusion length and higher mobility. In addition to the one
dimensional fiber structure, we designed and fabricated high surface-to-volume ratio 3D hierarchical flower-like structures for
increasing the gas-sensitivity. Effects of annealing temperature under sulfur flow on the morphological changes of MoS2 and
WS2 fibers are reported and will be discussed.
Biography
Doo-Hyeb Youn has received his BS and MS degrees in Solid-State Physics from Pusan National University, Republic of Korea . He has received his PhD
in Materials Science from Tokushima National University, Japan in 1999. He has joined the Electronics and Telecommunications Research Institute, Daejeon,
Republic of Korea , in 2001. His research interests include growth and process of III-V nitrides blue light-emitting diodes (AlGaN, GaN) and HEMTs, analysis of III-V
compound semiconductor devices. He is a Member of the Japan Society of Applied Physics.