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conferenceseries
.com
Volume 6
Research & Reviews: Journal of Material Sciences
MatSciEngg 2018
October 15-17, 2018
October 15-17, 2018 Helsinki, Finland
31
st
Materials Science and Engineering
Conference: Advancement & Innovations
Optimize the performance of graphene-based resistive random access memory device with the effective
decoration of MoS
2
Minghui Cao, Hengwei Qiu and Minqiang Wang
Xi’an Jiaotong University, China
G
raphene and its derivatives are widely used in Resistive Random Access Memory
(RRAM) for their outstanding electrical properties. Considering the simplicity
and economy of preparation method, Graphene Oxide (GO) and reduced Graphene
Oxide (rGO) have attracted much more attention than graphene obtained by
Chemical Vapor Deposition (CVD). However, suffering from the poor conductivity
caused by a large number of defects, GO and rGO exhibit poor performance in
RRAM. To overcome this issue, a material with good conductivity can be used to
improve the conductivity of GO or rGO. As a member of graphene-like materials,
molybdenum disulfide (MoS
2
) is an appropriate additive due to its good electrical
conductivity and easily obtained in solution. In this paper, MoS
2
was synthesized and
introduced into GO in different ways to fabricate the memory devices. After the effective mixture of MoS
2
and GO, the device
exhibited a memristor performance, with the on/off ratio of 20, which dramatically changed the poor performance of pure GO
in memristor. In order to further improve the poor conductivity of GO and solve the problems caused by defects, GO powder,
thiourea and sodium molybdate were simultaneously used to participate in the reduction reaction to form rGO-MoS
2
. MoS
2
microspheres adhere tightly to the rGO sheets participating in the charge trapping and releasing process between rGO sheets
while increasing the conductivity of the system. An outstanding memory performance was obtained from rGO-MoS
2
-based
memory device showing an extremely high on/off ratio of 1000 which is 50 times higher than before. The results indicate that
rGO-MoS
2
has great application potential in the resistive memory which plays an important role in the subsequent research
on RRAM.
Biography
Minghui Cao is a PhD candidate in School of Electronic and Information Engineering from Xi’an Jiaotong University. She is pursuing her Doctor’s degree in
Electronic Science and Technology. Her research interests include the preparation of flexible nano-materials and their applications in wearable devices.
caomh91@stu.xjtu.edu.cnMinghui Cao et al., Res. Rev. J Mat. Sci. 2018, Volume 6
DOI: 10.4172/2321-6212-C5-027