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Journal of Material Sciences
ISSN: 2321-6212
I n t e r n a t i o n a l C o n f e r e n c e o n
Metal, Mining and
Magnetic Materials
N o v e m b e r 0 1 - 0 2 , 2 0 1 8
P a r i s , F r a n c e
Metal and Magnetism 2018
Area and energy efficient magnetic full adder based on
differential spin hall MRAM
Brajesh Kumar Kaushik and Sanjay Prajapati
Associate professor, India
T
he concept of in-memory computing has gained significant attraction with the inception of perpendicular magnetic tunnel
junction (PMTJ) device, due to its non-volatility and CMOS compatibility. In the recent past, several magnetic full-adder (MFA)
designs based on spin-transfer torque (STT) and spin Hall effect (SHE) magnetic random access memories (MRAMs) have
been demonstrated. However, the designs consume higher write energy and occupy larger area. In this work, a novel MFA using
differential spin Hall (DSH) MRAM is proposed. The DSH-MRAM provides simultaneous switching of two PMTJ devices using
SHE and generates complementary logic outputs. The single Hall metal (HM) shared by these PMTJ devices offers a very low
resistance path for write operation. In this work, an external magnetic field (EMF) is used to assist the SHE current for PMTJ
switching that eliminates the need of STT current. A SPICE compatible Verilog-A MTJ model is used to mimic the operational
behaviour of the proposed MFA. The EMF assisted DSH-MRAM requires a very short pulse (300 ps) of SHE current to switch both
the PMTJs. The proposed MFA exhibits 65% less operation time, consumes 93% (18%) less write (read) energy, and saves 23%
area compared to recently published STT/SHE-MTJ based MFA designs.
bkk23fec@iitr.ac.inJ Mat. Sci. 2018, Volume:6
DOI: 10.4172/2321-6212-C7-033