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Volume 6
Research & Reviews: Journal of Material Sciences
ISSN: 2321-6212
Advanced Materials 2018
September 04-06, 2018
September 04-06, 2018 | Zürich, Switzerland
21
st
International Conference on
Advanced Materials & Nanotechnology
Restoration of perovskite phase in the top layer of thin BTO film by plasma treatment and annealing
Ankita Ghatak
S N Bose National Centre for Basic Sciences, India
B
arium titanate (BaTiO
3
) is a very attractive material in the field of electroceramics and microelectronics due to its good
electrical properties. Its high dielectric constant and low loss characteristics make BTO an excellent choice for many
applications, such as capacitors, multilayer capacitors (MLCs) and energy storage devices. In more recent activities, the focus
has shifted on growth of thin BTO films with thickness ≤200 nm and preferably even thinner like 100 nm. It is desirable to
have thin films of BTO grown on (Pt/Si) that can act as a super capacitor if the relative permittivity is more than 100. However,
the growth of thin BTO film (~100 nm) with acceptable dielectric and ferroelectric properties has not been adequately
addressed to and the method to grow such a film has not been standardized either. We report a simple method to restore
the perovskite phase in the top surface/sub-surface region of a thin film (~100 nm) of barium titanate (BTO) fabricated by
pulsed laser deposition on a platinized silicon (Pt/Si) surface and thus enhance its dielectric and ferroelectric properties. Phase
evolution, surface morphology with local chemical composition of BTO films have been studied as a function of laser fluence.
Investigations using X-ray diffraction (XRD), grazing-angle incidence X-ray diffraction (GIXRD) and depth resolved X-ray
photoelectron spectroscopy (XPS) show that even after achieving a good phase formation there can be a presence of non-
perovskite TiO
2
phase at the surface and subsurface in such films that degrades its dielectric and ferroelectric response. The
restoration of the degraded top layer was done by a combination of low energy Ar plasma treatment followed by an annealing
process that enhances Ba content.
Biography
Ankita Ghatak is a Post-doctoral Fellow and has her expertise in growth of nanostructured binary as well as complex oxides. She has grown aligned 1-D nanostructured
binary oxide which has a strong influence in the field of applications. She also has her on expertise on microstructural analysis of complex oxide nanostructures that has
provided up a new field of research from technological point of view. Her interface analysis of complex materials with substrates has opened a challenging field in the
device fabrication process. She in her publications has tremendously contributed about the benefit of creating atomically sharp interfaces that will enhance the future
device performances.
ankita.ghatak@bose.res.inAnkita Ghatak, Res. Rev. J Mat. Sci. 2018, Volume 6
DOI: 10.4172/2321-6212-C3-020