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conferenceseries.com
Volume 6 Research & Reviews: Journal of Material Sciences
ISSN: 2321-6212 Advanced Materials 2018
September 04-06, 2018
September 04-06, 2018 | Zürich, Switzerland
21st International Conference on
Advanced Materials & Nanotechnology
Recent Publications
1. Kurose N, Matumato K, Yamada F, Roffi T M, Kamiya I, Iwata N and Aoyagi Y (2018) Laser induced local activation of
Mg-doped GaN with high lateral resolution for high power vertical devices. AIP Advances 8: 015329-1-015329-5.
2. Kurose N and Aoyagi Y (2016) Development of high power, large area, deep ultraviolet light emitting devices using
dynamic microplasma excitation (MIPE) of AlGaN multiple quantum wells. Electronics and Communications in Japan
99:3-11.
3. Kurose N, Iwata N, Kamiya I and Aoyagi Y (2014) Formation of conductive spontaneous via holes in AlN buffer layer on
n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical
deep ultraviolet photo-sensor. AIP Advances 4(12):123007.
4. Kurose N, Shibano K, Araki T and Aoyagi Y (2014) Development of substrate removal free vertical ultraviolet light-
emitting diode (RefV-LED). AIP Advances 4:027122.
5. Aoyagi Y and Kurose N (2013) A 2-inch, large-size deep ultraviolet light-emitting device using dynamically controlled
micro-plasma-excited AlGaN. Applied Physics Letters 102(4):041114.
Biography
Noriko Kurose has her expertise in “Crystal growth engineering of nitride semiconductor using metal organic chemical vapor deposition to control the material properties”.
She found an insulating material can be converted to conductive one by introducing nano via-holes spontaneously inside the insulator using a crystal growth technique
and she has clarified the conversion mechanism. Her invention opens a way to fabricate various vertical devices on Si substrate and Si on chip devices. Actually, she has
succeeded in fabricating a vertical UV-LED and a vertical UV sensor using her technology. In addition, she has succeeded in fabricating large area panel type micro plasma
excited DUV light emitting devices with a size of more than two inches. She was invited to present her work in many international conferences.