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conferenceseries
.com
Volume 5, Issue 6 (Suppl)
J Mat. Sci.
ISSN: 2321-6212
Advanced Materials 2017
October 26-28, 2017
OCTOBER 26-28, 2017 OSAKA, JAPAN
13
TH
INTERNATIONAL CONFERENCE ON
Advanced Materials and Nanotechnology
Large-scale high quality monolayer graphene grown directly at 150
o
C via plasma-assisted thermal
CVD without transfer process
Soon-Gil Yoon
1
, Jin-Seok Choi
1, 2
, Hyunwoo Ha
1
, Hyun You Kim
1
, Seonhee Lee
3
, Hyunjung Shin
3
, Ji-Ho Eom
1
, Hyung-Jin Choi
1
and Byeong-Ju Park
1
1
Chungnam National University, Republic of Korea
2
Korea Advanced Institute of Science and Technology, Republic of Korea
3
Sungkyunkwan University, Republic of Korea
D
irect graphene growth on functional substrates via chemical vapor deposition is an attractive approach to manufacturing
flexible electronic devices, as it avoids the drawbacks of transferred graphene. To fabricate flexible devices on plastic
substrates, the growth temperature must be below ~200 °C to prevent substrate deformation. Here, we report the direct growth
of wrinkle and defect-free graphene on flexible substrates at low temperatures and without transfer processes. We show that
defect-free graphene can be directly grown on a variety of substrates via the introduction of an ultra-thin titanium buffer
layer, due to perfect lattice matching between titanium and carbon atoms. We further show that
ex situ
Ti layers (Ti
x
O
y
) with
a thickness of ~10 nm does not influence the transmittance or electrical conductivity of functional substrates. We report
theoretical and experimental evidence for large-scale (4×4 cm
2
) high-quality graphene grown on
in situ
deposited titanium-
buffered substrates at 150 °C in a CH
4
/H
2
atmosphere via plasma-assisted thermal CVD. We applied the proposed methodology
to fabricate flexible and transparent thin-film capacitors with direct grown top- and bottom-graphene electrodes.These findings
could pave the way to the practical exploitation of flexible electronic devices via large-scale high-quality monolayer graphene
grown directly with no transfer processes.
Biography
Soon-Gil Yoon has received his PhD from the Korea Advanced Institute of Science and Technology (KAIST), Korea in 1988. He is a Professor in Department of
Materials Science and Engineering, Chungnam National University, Republic of Korea. His current research interests are thin film capacitor, fusion technology of
solar cell, etc. He has published 310 SCI papers.
sgyoon@cnu.ac.krSoon-Gil Yoon et al., J Mat. Sci. 2017, 5:6
DOI: 10.4172/2321-6212-C1-008