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.com
Volume 5, Issue 6 (Suppl)
J Mat. Sci.
ISSN: 2321-6212
Advanced Materials 2017
October 26-28, 2017
OCTOBER 26-28, 2017 OSAKA, JAPAN
13
TH
INTERNATIONAL CONFERENCE ON
Advanced Materials and Nanotechnology
High performance of patterned sapphire substrate light-emitting diodes with embedded air void by
textured Si
3
N
4
intermediate layer
Shih-Chieh Hsu, Chao Szu Han and Ying-Hui Luo
Tamkang University, Taiwan
W
e use Patterned Sapphire Substrate (PSS) to obtain the completed mesa-type Light-Emitting Diode (LEDs). It can reduce
the threading dislocation densities. In addition, we use textured silicon nitride (Si
3
N
4
) to replace silicon dioxide (SiO
2
),
which is commonly used, as a barrier to form a patterned sapphire substrate. After re-growing, we observe that the air voids
exist on the top of the textured Si
3
N
4
intermediate layer. The air voids help more light be extracted to the outside due to the
total reflection and thus enhance the light extraction efficiency of light-emitting diodes. Additionally, we use temperature
dependent PL results to estimate the Internal Quantum Efficiency (IQE) of PSS-LED and that of PSS-LED with embedded air
void. While the IQE of PSS-LED is 8.87%, the other present is 11.29 % and the PL intensity of PSS-LED with embedded air
voids is 1.27 times higher than PSS-LED. Finally, we performed optical simulation by TracePro. It also reveals that the Light
Extraction Efficiency (LEE) of PSS-LED with embedded air voids is 1.44 times better than that of the PSS-LED.
Biography
Shih-Chieh Hsu has completed his PhD from National Central University and Postdoctoral studies from RCAS, Sinica. He is the Associate Professor of department
of chemical and materials engineering at Tamkang University. His work focuses on optoelectronic devices, semiconductor and light-emitting diodes. He has
published more than 23 papers in reputed journals and has been serving as an Editorial Board Member of repute.
roysos1@gmail.comShih-Chieh Hsu et al., J Mat. Sci. 2017, 5:6
DOI: 10.4172/2321-6212-C1-008